Integrated circuit memory devices with customizable standard cell logic

ABSTRACT

Provided are a semiconductor device and a semiconductor system. A semiconductor device includes a memory cell array; a standard cell region in which first type standard cells implemented to perform a first operation for accessing the memory cell array and second type standard cells performing the first operation and having performance characteristics different from performance characteristics of the first type standard cells are arranged; and a ROM including a program that performs place and route for the standard cells arranged in the standard cell region.

REFERENCE TO PRIORITY APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/346,342, filed Nov. 8, 2016, which claims priority from Korean PatentApplication No. 10-2015-0156823, filed Nov. 9, 2015 in the KoreanIntellectual Property Office, the disclosures of which are herebyincorporated herein by reference.

BACKGROUND 1. Field of the Inventive Concept

The present inventive concept relates to semiconductor memory devicesand systems and methods of operating same.

2. Description of the Prior Art

A required memory capacity or operating speed of a memory device maydiffer in accordance with various applications. Particularly, inaccordance with various product requirements, such as IoT (Internet ofThings) that is recently noticed, control of the capacity and/orperformance of a memory device, for example, the operating speed,operation latency and/or power consumption of the memory device, may berequired. In order to cope with such requirements, there may be a needfor a semiconductor device that can optimize the function and theoperating condition thereof in accordance with a user's requirements(i.e., applications) without greatly deviating from the structure of theexisting memory device.

SUMMARY

One subject to be solved by the present inventive concept is to providesemiconductor devices and systems that can customize the memoryperformance using standard cell logic.

According to an embodiment of the present disclosure, there is provideda semiconductor device including a memory cell array, a standard cellregion in which first type standard cells are implemented to perform afirst operation for accessing the memory cell array and second typestandard cells are implemented to perform the first operation, but withdifferent performance characteristics relative to the first typestandard cells, and a read-only memory (ROM) containing a program thatsupports operations to place and route the standard cells arranged inthe standard cell region.

According to another aspect of the present disclosure, there is provideda semiconductor device including: (i) a memory cell array, (ii) astandard cell region in which first type standard cells are arranged todefine a critical operational path for accessing the memory cell arrayand second type standard cells are arranged to provide a user-definedoperational path for accessing the memory cell array, and (iii) aread-only memory (ROM), which contains a program that performs place androute for the standard cells arranged in the standard cell region.

According to additional embodiments of the invention, an integratedcircuit device is provided that contains a memory cell array in asemiconductor substrate and standard cell logic electrically coupled tothe memory cell array. The standard cell logic can include a firstplurality of standard cells configured to support first write and/orfirst read operations in the memory cell array and a second plurality ofstandard cells configured to support second write and/or second readoperations in the memory cell array, which have different performancecharacteristics relative to performance characteristics associated withthe first write and/or read operations.

According to some of these embodiments of the invention, the firstplurality of standard cells have different latency and/or operatingspeed and/or power consumption characteristics relative to the secondplurality of standard cells. According to additional embodiments of theinvention, a read-only memory (ROM) is provided, which is electricallycoupled to the standard cell logic. In addition, input/output (I/O) pinsare provided along with first I/O standard cells (within the standardcell logic). According to some of these embodiments of the invention,the first I/O standard cells are configured to establish a first number(N1) of the I/O pins as active and a second number (N2) of the I/O pinsas inactive, in accordance with I/O pin programming informationcontained in the ROM. In these embodiments, the first number N1 isselected from a group consisting of 8, 16 and 32 and the second numberN2 is selected from a group consisting of 0, 16 and 24. According toadditional embodiments of the invention, the memory cell array includesa plurality of memory banks and the standard cell logic includes amemory bank standard cell logic, which is configured to set a number ofactive memory banks in the plurality of memory banks, in response toprogramming information contained in said ROM.

According to additional embodiments of the invention, an integratedcircuit device is provided that contains a memory cell array in asemiconductor substrate along with standard cell logic, which iselectrically coupled to the memory cell array. The standard cell logicincludes a first plurality of standard cells, which are configured tosupport a first operational path for accessing the memory cell array,and a second plurality of standard cells, which are configured tosupport a second user-programmable operational path for accessing thememory cell array. A programmable read-only memory (PROM) is provided,which is electrically coupled to the standard cell logic and configuredto support a program of instructions that specifies theuser-programmable operational path. The PROM may further be configuredto support a program of operations to be performed by the standard celllogic. These operations may be selected from a group consisting ofmemory copy, pop count and auto read modify write operations.

Additional advantages, subjects, and features of the inventive conceptwill be set forth in part in the description which follows and in partwill become apparent to those having ordinary skill in the art uponexamination of the following or may be learned from practice of theinventive concept.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinventive concept will be more apparent from the following detaileddescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a schematic diagram explaining a semiconductor memory systemaccording to an embodiment of the present inventive concept;

FIG. 2 is a schematic diagram explaining a semiconductor memory deviceaccording to an embodiment of the present inventive concept;

FIG. 3 is a schematic diagram explaining a semiconductor memory deviceaccording to an embodiment of the present inventive concept;

FIG. 4 is a schematic diagram explaining a standard cell type that isused in a semiconductor memory device according to an embodiment of thepresent inventive concept;

FIG. 5 is a schematic diagram explaining a standard cell type that isused in a semiconductor memory device according to another embodiment ofthe present inventive concept;

FIG. 6 is a schematic diagram explaining a semiconductor memory deviceaccording to an embodiment of the present inventive concept;

FIG. 7 is a schematic diagram explaining a semiconductor memory deviceaccording to another embodiment of the present inventive concept;

FIG. 8 is a schematic diagram explaining a standard cell type that isused in a semiconductor memory device according to still anotherembodiment of the present inventive concept;

FIG. 9 is a schematic diagram explaining a semiconductor memory deviceaccording to still another embodiment of the present inventive concept;

FIG. 10 is a schematic diagram explaining a semiconductor systemaccording to another embodiment of the present inventive concept;

FIG. 11 is a schematic diagram explaining a method for operating asemiconductor device according to an embodiment of the present inventiveconcept; and

FIGS. 12 to 14 are views of exemplary semiconductor systems to which asemiconductor device and a semiconductor system according to someembodiments of the present inventive concept can be applied.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Embodiments will be described in detail with reference to theaccompanying drawings. The inventive concept, however, may be embodiedin various different forms, and should not be construed as being limitedonly to the illustrated embodiments. Rather, these embodiments areprovided as examples so that this disclosure will be thorough andcomplete, and will fully convey the concept of the inventive concept tothose skilled in the art. Accordingly, known processes, elements, andtechniques are not described with respect to some of the embodiments ofthe inventive concept. Unless otherwise noted, like reference numeralsdenote like elements throughout the attached drawings and writtendescription, and thus descriptions will not be repeated. In thedrawings, the sizes and relative sizes of layers and regions may beexaggerated for clarity.

It will be understood that, although the terms “first”, “second”,“third”, etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another region, layer or section. Thus, a firstelement, component, region, layer or section discussed below could betermed a second element, component, region, layer or section withoutdeparting from the teachings of the inventive concept.

Spatially relative terms, such as “beneath”, “below”, “lower”, “under”,“above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. For example, if the device inthe figures is turned over, elements described as “below” or “beneath”or “under” other elements or features would then be oriented “above” theother elements or features. Thus, the exemplary terms “below” and“under” can encompass both an orientation of above and below. The devicemay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein interpretedaccordingly. In addition, it will also be understood that when a layeris referred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Also, the term “exemplary” is intended to referto an example or illustration.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to”, “coupled to”, or “adjacent to” anotherelement or layer, it can be directly on, connected, coupled, or adjacentto the other element or layer, or intervening elements or layers may bepresent. In contrast, when an element is referred to as being “directlyon,” “directly connected to”, “directly coupled to”, or “immediatelyadjacent to” another element or layer, there are no intervening elementsor layers present.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present specification and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Advantages and features of the present inventive concept and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of preferred embodiments and theaccompanying drawings.

Hereinafter, preferred embodiments of the present inventive concept willbe described with reference to the accompanying drawings.

FIG. 1 is a schematic diagram explaining a semiconductor systemaccording to an embodiment of the present inventive concept. Referringto FIG. 1, a semiconductor system 1 according to an embodiment of thepresent inventive concept may include a host device 50, a memory device100, and a memory controller 200. The host device 50 transmits a memoryaccess request (i.e., command) to the memory controller 200. The memoryaccess request may include a request to read data stored in the memorydevice 100 or a request to write data in the memory device 100. Thememory access request may include address information ADDR and dataDATA. For example, if the memory access request corresponds to a readrequest, the memory access request may include memory addressinformation to read the data stored in the memory device 100.Alternatively, if the memory access request corresponds to a writerequest, the memory access request may include data to be stored in thememory device 100 and memory address information to store the data inthe memory device 100.

In some embodiments of the present inventive concept, the host device 50may be one of various types of computing devices including a personalcomputer, a server computer, a notebook computer, and a tablet computer.However, the scope of the present inventive concept is not limitedthereto, and the host device 50 may include a certain electronic deviceor electronic circuit that can generate a request to read/write data inthe memory device 100.

The memory controller 200 controls the memory device 100. The memorycontroller 200 receives a memory access request from the host device 50,and transmits the memory access request to the memory device 100. Thememory access request, which the memory controller 200 transmits to thememory device 100, may also include address information ADDR and dataDATA. For example, if the memory access request corresponds to a readrequest, the memory access request may include memory addressinformation to read the data stored in the memory device 100.Alternatively, if the memory access request corresponds to a writerequest, the memory access request may include data to be stored in thememory device 100 and memory address information to store the data inthe memory device 100.

In some embodiments of the present inventive concept, if the memoryaccess request corresponds to the write request, data to be stored inthe memory device 100 may be directly transferred from the host device50 to the memory device 100 without passing through the memorycontroller 200.

The memory device 100 performs a memory access operation with respect tothe memory access request under the control of the memory controller200. In some embodiments of the present inventive concept, the memorydevice 100 may include a DRAM (Dynamic Random Access Memory). However,the scope of the present inventive concept is not limited thereto, andthe memory device 100 may include a volatile memory or a nonvolatilememory.

FIGS. 2 and 3 are schematic diagrams explaining a semiconductor deviceaccording to an embodiment of the present inventive concept. Referringto FIGS. 2 and 3, a semiconductor device 100 according to an embodimentof the present inventive concept may include a memory cell array 110, astandard cell region 120, a ROM (Read Only Memory) 130, a first I/O(Input/Output) region 140, and a second I/O region 150.

The memory cell array 110 includes a plurality of memory cells 111 inwhich data is actually stored. In some embodiments of the presentinventive concept, the memory cell array 110 may include a plurality ofbanks. For example, a bank includes a memory cell 111, a row decoder113, and a column decoder 115, and may form one memory access unit inthe memory cell array 110. Specifically, the memory cell array 110includes selection circuits 117 and 119 that can select a specific bankamong a plurality of banks. For example, the first selection circuit 119may select memory cells 111 arranged on a left half region of the memorycell array 110 in FIG. 3, or may select memory cells 111 arranged on aright half region. If the first selection circuit 119 selects the lefthalf region of the memory cell array 110 in FIG. 3, the second selectioncircuit 117 may select memory cells 111 arranged on an upper portion ofthe left half region of the memory cell array 110 or memory cells 111arranged on a lower portion of the left half region. That is, theselection circuits 117 and 119 can activate or inactivate the memorycell array 110 in the unit of a bank, and they may be controlled by somestandard cells included in the standard cell region 120 to be describedlater.

The standard cell region 120 includes a plurality of standard cells 121that enable the memory device 100 to perform a memory access operation.The standard cell is a kind of circuit to provide a specific function,and it includes a plurality of transistors and interconnections. Here,the specific function may be, for example, a Boolean logic function or astorage function. An example of the Boolean logic function may be alogic operation of AND, OR, XOR, XNOR, or inversion, and an example ofthe storage function may be a logic operation of flip-flop or latch. Invarious embodiments of the present inventive concept, the standard cells121 arranged in the standard cell region 120 may be designed toimplement their inherent functions, and specifically, functions that arenecessary for the memory access operation.

The ROM 130 includes a program that performs place and route operationfor the standard cells 121 arranged in the standard cell region 120.Specifically, in accordance with the application purposes of the memorydevice 100, the program stored in the ROM 130 may select the standardcells 121 arranged in the standard cell region 120 that determines theoperation of the memory device 100, and may form a connection so thatthe selected standard cells 121 are electrically connected to eachother.

The first I/O region 140 is a region of the memory device 100 in which acommand for accessing the memory cell array 110, address information,and data are input/output. The first I/O region 140 is connected tofirst I/O pins that are exposed on a package. Here, the first I/O regionaccording to various embodiments of the present inventive concept mayinclude I/O pin standard cells 141 that determine the number of activepins among the first I/O pins. That is, the number of pins of the memorydevice 100 may be determined depending on which I/O pin standard cellsamong the I/O pin standard cells 141 arranged in the first I/O region140 the program stored in the ROM 130 performs place and route for.

The second I/O region 150 is a region that is used to store the programthat performs place and route for the ROM 130. The second I/O region 150is connected to second I/O pins that are exposed on the package. Thatis, the second I/O pins electrically connect the ROM 130 to an externaldevice that is connected to the memory device 100, so that the programis transmitted from the external device to the ROM 130. Here, the secondI/O region 150 according to various embodiments of the present inventiveconcept may include I/O pin standard cells 151 that determine the numberof active pins among the second I/O pins.

FIG. 4 is a schematic diagram explaining a standard cell type that isused in a semiconductor device according to an embodiment of the presentinventive concept. Referring to FIG. 4, the standard cells used in asemiconductor device according to an embodiment of the present inventiveconcept may include two or more standard cell types.

On the standard cell region 120 of the memory device 100, a first typestandard cell 121 a and second type standard cells 121 b, 121 c, and 121d that are different from the first type standard cell 121 a may bearranged. The first type standard cell 121 a may be implemented toperform a first operation for accessing the memory cell array 110, i.e.,memory operation. The second type standard cells 121 b, 121 c, and 121 dmay be implemented to perform the first operation that is the same asthat of the first type standard cell 121 a in a state where they havethe performance characteristics that are different from those of thefirst type standard cell 121 a.

For example, the second type standard cell 121 b may be a standard cellwhich performs the same operation as the operation of the first typestandard cell 121 a, but has the latency characteristics that aredifferent from those of the first type standard cell 121 a. If a mainrequirement is to operate with lower latency than other performances inan application environment of the memory device 100, the second typestandard cell 121 b may be placed and routed in an operational path ofthe memory device instead of the first type standard cell 121 a.

As another example, the second type standard cell 121 c may be astandard cell which performs the same operation as the operation of thefirst type standard cell 121 a, but has the operating speedcharacteristics that are different from those of the first type standardcell 121 a. If a main requirement is to operate at higher speed thanother performances in an application environment of the memory device100, the second type standard cell 121 c may be placed and routed in theoperational path of the memory device instead of the first type standardcell 121 a.

As still another example, the second type standard cell 121 d may be astandard cell which performs the same operation as the operation of thefirst type standard cell 121 a, but has the power consumptioncharacteristics that are different from those of the first type standardcell 121 a. If a main requirement is to operate with lower powerconsumption than other performances in an application environment of thememory device 100, the second type standard cell 121 d may be placed androuted in the operational path of the memory device instead of the firsttype standard cell 121 a.

FIG. 5 is a schematic diagram explaining a standard cell type that isused in a semiconductor device according to another embodiment of thepresent inventive concept. Referring to FIG. 5, the standard cells usedin a semiconductor device according to another embodiment of the presentinventive concept may include two or more standard cell types. In thefirst I/O region 140 of the memory device 100, I/O pin standard cells141 a, 141 b, and 141 c may be arranged. These I/O pin standard cells141 a, 141 b, and 141 c may differently set the number of active pinsamong the first I/O pins.

For example, the I/O pin standard cell 141 a may be an 8-pin standardcell, the I/O pin standard cell 141 b may be a 16-pin standard cell, andthe I/O pin standard cell 141 c may be a 32-pin standard cell. In thesestandard cells, the numbers of active pins among the first I/O pins maybe set to 8, 16, and 32, respectively.

In some embodiments of the present inventive concept, the active pinsthat are set by the I/O pin standard cells 141 a, 141 b, and 141 c maycoincide with the interface of a memory in the related art, such as aDRAM. In other words, through transmission of commands used in thememory in the related art, such as the DRAM, to meet the timing that issupported in the memory in the related art, compatibility can be securedbetween the semiconductor device according to various embodiments of thepresent inventive concept and the memory controller in the related art.

FIG. 6 is a schematic diagram explaining a semiconductor deviceaccording to an embodiment of the present inventive concept. Referringto FIG. 6, a semiconductor device 100 according to an embodiment of thepresent inventive concept includes a first type standard cell 121 a anda low-latency standard cell 121 b that is a second type standard cellthat is different from the first type standard cell 121 a in a standardcell region 120. On the other hand, the semiconductor device 100includes a 16-pin standard cell 141 b that is an I/O pin standard cellin a first I/O region 140. Of course, an additional standard cell thatperforms a different function from the function of the first typestandard cell 121 a or the second type standard cell 121 b may befurther included in the standard cell region 120.

A program stored in a ROM 130 may define operational paths P1 and P2 ofthe semiconductor device through performing of place and route for anyone of the first type standard cell 121 a and the second type standardcell 121 b and the additional standard cell. Here, a program stored inthe ROM 130 may perform place and route in a normal mode or a customizedmode. In the case where the program performs the place and route in thenormal mode, the program stored in the ROM 130 may define theoperational path through performing of the place and route for the firsttype standard cell 121 a and the additional standard cell. In contrast,in the case where the program performs the place and route in thecustomized mode, the program may define the operational paths P1 and P2through performing of the place and route for the second type standardcell 121 b and the additional standard cell.

The memory device 100 according to various embodiments of the presentinventive concept may further include a memory bank standard cell thatdetermines the number of active banks among a plurality of banks in thestandard cell region 120. Specifically, the memory bank standard cellmay include a first memory bank standard cell and a second memory bankstandard cell, and the first memory bank standard cell and the secondmemory bank standard cell may be set to have different numbers of activebanks. For example, the first memory bank standard cell may activate amemory cell 111 a and the second memory bank standard cell may activatea memory cell 111 b.

Here, a program stored in the ROM 130 may determine the memory capacityof the memory device 100 through adjustment of the number of activebanks that is set by the memory bank standard cell as described above.For example, the program may set the capacity of the memory device 100to 1 Gb, 2 Gb, or 4 Gb by properly performing place and route for thememory bank standard cell.

FIG. 7 is a schematic diagram explaining a semiconductor deviceaccording to another embodiment of the present inventive concept.Referring to FIG. 7, a semiconductor device 100 according to anotherembodiment of the present inventive concept includes a first typestandard cell 121 a and a low-power standard cell 121 d that is a secondtype standard cell that is different from the first type standard cell121 a in a standard cell region 120. On the other hand, thesemiconductor device 100 includes a 32-pin standard cell 141 c that isan I/O pin standard cell in a first I/O region 140. Of course, anadditional standard cell that performs a different function from thefunction of the first type standard cell 121 a or the second typestandard cell 121 d may be further included in the standard cell region120.

A program stored in a ROM 130 may define operational paths P3 and P4 ofthe semiconductor device through performing of place and route for anyone of the first type standard cell 121 a and the second type standardcell 121 d and the additional standard cell.

Here, in the case where the program performs the place and route in thenormal mode, the program may define the operational path throughperforming of the place and route for the first type standard cell 121 aand the additional standard cell. In contrast, in the case where theprogram performs the place and route in the customized mode, the programmay define the operational paths P3 and P4 through performing of theplace and route for the second type standard cell 121 d and theadditional standard cell.

FIG. 8 is a schematic diagram explaining a standard cell type that isused in a semiconductor device according to still another embodiment ofthe present inventive concept. Referring to FIG. 8, the standard cellsused in a semiconductor device according to still another embodiment ofthe present inventive concept may include two or more standard celltypes. In a standard cell region 120 of the memory device 100, a firsttype standard cell 123 a and a second type standard cell 123 b may bearranged. The first type standard cell 123 a is a critical operationalpath standard cell, and may define a critical operational path foraccessing a memory cell array 110. The second type standard cell 123 bis a user defined path standard cell, and may define a user definedoperational path for accessing the memory cell array 110. That is, thesecond type standard cell 123 b may be implemented to perform anoperation defined by a user. In some embodiments of the presentinventive concept, the operation defined by the user may include any oneof a memory copy operation, a pop count operation, and an auto readmodify write operation.

FIG. 9 is a schematic diagram explaining a semiconductor deviceaccording to still another embodiment of the present inventive concept.Referring to FIG. 9, a semiconductor device 100 according to stillanother embodiment of the present inventive concept includes a criticaloperational path standard cell 123 a and a user defined path standardcell 123 b that are provided in a standard cell region 120. On the otherhand, the semiconductor device 100 includes a 32-pin standard cell 141 cthat is an I/O pin standard cell provided in a first I/O region 140. Ofcourse, the semiconductor device 100 may further include an additionalstandard cell that performs a different function from the function ofthe critical operational path standard cell 123 a or the user definedpath standard cell 123 b provided in the standard cell region 120.

A program stored in a ROM 130 may define operational paths P5, P6, P7,and P8 of the semiconductor device through performing of place and routefor any one of the critical operational standard cell 123 a and the userdefined path standard cell 123 b and the additional standard cell. Here,in the case where the program performs the place and route in a normalmode, the program may define the operational paths P5 and P7 throughperforming of the place and route for the critical operational pathstandard cell 123 a and the additional standard cell. In contrast, inthe case where the program performs the place and route in a customizedmode, the program may define the operational paths P6 and P8 throughperforming of the place and route for the user defined path standardcell 123 b and the additional standard cell.

FIG. 10 is a schematic diagram explaining a semiconductor systemaccording to another embodiment of the present inventive concept.Referring to FIG. 10, a semiconductor system 2 according to anotherembodiment of the present inventive concept is different from thesemiconductor system 1 according to the embodiment as illustrated inFIG. 1 on the point that the semiconductor system 2 may further includea ROM writer 160.

The ROM writer 160 stores a program that performs place and route for astandard cell 121 arranged in a standard cell region 120 in a ROM 130.In some embodiments of the present inventive concept, storing of theprogram in the ROM 130 using the ROM writer 160 may be performed duringmanufacturing of the semiconductor device according to variousembodiments of the present inventive concept. Alternatively, in someembodiments of the present inventive concept, the storing of the programin the ROM 130 using the ROM writer 160 may be formed while a user usesthe semiconductor device 100 according to various embodiments of thepresent inventive concept.

FIG. 11 is a schematic diagram explaining a method for operating asemiconductor device according to an embodiment of the present inventiveconcept. Referring to FIG. 11, a method for operating a semiconductordevice according to an embodiment of the present inventive conceptincludes performing a system design of a semiconductor device 100,specifically, a standard cell region 120 and an I/O region 140 (S11010),and performing an RTL coding based on the design (S1103).

The method further includes performing mapping and place and route tostore the information (S1105 and S1107), and storing setting of timingfor the operation of the semiconductor device 100. Then, the methodfurther includes performing other environmental settings (S1111), andwriting programs generated on the basis of works performed up to now ina ROM 130 of the semiconductor device 100 through a ROM writer 160(S1113).

According to the semiconductor device and the semiconductor systemaccording to various embodiments of the present inventive concept, thecapacity or performance of the memory device, for example, the operatingspeed, operation latency, or power consumption of the memory device, canbe easily controlled through programming of the operation of the memorydevice in accordance with various product requirements to which thesemiconductor device and the semiconductor system are applied, withoutgreatly deviating from the structure of the existing memory device.

FIGS. 12 to 14 are views of exemplary semiconductor systems to which asemiconductor device and a semiconductor system according to someembodiments of the present inventive concept can be applied. FIG. 12illustrates a tablet PC 1200, FIG. 13 illustrates a notebook computer1300, and FIG. 14 illustrates a smart phone 1400. At least one of thesemiconductor device and the semiconductor system according to theembodiments of the present inventive concept can be used in the tabletPC 1200, the notebook computer 1300, and the smart phone 1400 asdescribed above.

Further, it is apparent to those of ordinary skill in the art that thesemiconductor device and the semiconductor system according to someembodiments of the present inventive concept can also be applied toother non-exemplified integrated circuit devices. Although the tablet PC1200, the notebook computer 1300, and the smart phone 1400 areexemplified as examples of the semiconductor device and thesemiconductor system according to this embodiment, the scope of thepresent inventive concept is not limited thereto.

In some embodiments of the present inventive concept, the semiconductordevice and the semiconductor system may be implemented by a computer, aUMPC (Ultra Mobile PC), a work station, a net-book, a PDA (PersonalDigital Assistants), a portable computer, a wireless phone, a mobilephone, an e-book, a PMP (Portable Multimedia Player), a portable gamemachine, a navigation device, a black box, a digital camera, a3-dimensional television receiver, a digital audio recorder, a digitalaudio player, a digital picture recorder, a digital picture player, adigital video recorder, or a digital video player.

Although preferred embodiments of the present inventive concept havebeen described for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventiveconcept as disclosed in the accompanying claims.

What is claimed is:
 1. An integrated circuit device, comprising: a memory cell array in a semiconductor substrate; and standard cell logic electrically coupled to said memory cell array, said standard cell logic comprising a first plurality of standard cells configured to support first write and/or first read operations in said memory cell array and a second plurality of standard cells configured to support second write and/or second read operations in said memory cell array having different performance characteristics relative to performance characteristics associated with the first write and/or first read operations.
 2. The device of claim 1, wherein the first plurality of standard cells have at least different latency characteristics relative to the second plurality of standard cells.
 3. The device of claim 1, wherein the first plurality of standard cells have at least different operating speed characteristics relative to the second plurality of standard cells.
 4. The device of claim 1, wherein the first plurality of standard cells have at least different power consumption characteristics relative to the second plurality of standard cells.
 5. The device of claim 1, wherein the first plurality of standard cells have different latency, operating speed and power consumption requirements relative to the second plurality of standard cells.
 6. The device of claim 1, further comprising: a programmable read-only memory (PROM) electrically coupled to said standard cell logic; input/output (I/O) pins; and first I/O standard cells in said standard cell logic, said first I/O standard cells configured to establish a first number of the I/O pins as active and a second number of the I/O pins as inactive, in accordance with I/O pin programming information contained in said PROM.
 7. The device of claim 6, wherein the first number is selected from a group consisting of 8, 16 and 32 and the second number is selected from a group consisting of 0, 16 and
 24. 8. The device of claim 1, wherein said memory cell array comprises a plurality of memory banks; and wherein said standard cell logic comprises a memory bank standard cell logic configured to set a number of active memory banks in the plurality of memory banks, in response to programming information contained in said PROM. 